Abstract
The present study investigates Mg (0 ÷ 17.5 wt %), Cu (0 ÷ 21 wt %) and Ni (0 ÷ 20.2 wt %) dopants (M-doped) influence on photocatalytic activity of amorphous TiO2 thin films. Magnetron sputtering was used for the deposition of M-doped TiO2 thin films. According to SEM/EDS surface analysis, the magnetron sputtering technique allows making M-doped TiO2 thin films with high uniformity and high dopant dispersion. Photocatalysis efficiency analysis was set in oxalic acid under UV irradiation. In accordance with the TOC (total organic carbon) measurements followed by the apparent rate constant (kapp) results, the dopants’ concentration peak value was dopant-dependent; for Mg/TiO2, it is 0.9% (kapp—0.01866 cm−1), for Cu/TiO2, it is 0.6% (kapp—0.02221 cm−1), and for Ni/TiO2, it is 0.5% (kapp—0.01317 cm−1). The obtained results clearly state that a concentration of dopants in TiO2 between 0.1% and 0.9% results in optimal photocatalytic activity.
Highlights
Photocatalysis and photocatalytic materials based on semiconductors have been studied for more than a decade [1,2,3]
X-ray Diffraction (XRD) analysis shows that deposited TiO2 thin films were amorphous (Figure 3)
The present presentresearch researchsuggests suggeststhat that magnetron sputtering technique is suitable for doped film deposition because of its high purity, dopant dispersity in films, and the ability to deposit on a
Summary
Photocatalysis and photocatalytic materials based on semiconductors have been studied for more than a decade [1,2,3]. Research based on TiO2 as a photocatalyst among other semiconductors increased [7]. TiO2 manufacturing is affordable, which makes it economically favorable, especially when compared with materials having similar properties, such as SnO2 , CeO2 , CdS, and WO3. These semiconductors are used for photocatalysis research because of their biocompatibility, stability in various conditions, and capability to generate excitons [8,9]. TiO2 achieves better photocatalytic activity than ZnO [10] or
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