Abstract
TiO2 thin films were deposited by DC reactive magnetron sputtering technique on silicon wafer and glass slide at sputtering power of 210W and 230W. A pure metallic titanium target was sputtered in a mixture of argon and oxygen gases. The distance of Ti-target to substrate holder (ds-t) was 120mm. The films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The photocatalytic activity was evaluated by the measurement of the decomposition of methylene blue after UV irradiation. It was found that the crystalline structure of TiO2 thin films strongly depended on the sputtering power. The mixed phase of anatas/rutile TiO2 thin films were successfully obtained with the sputtering power of 230W. While anatase TiO2 thin films were obtained with sputtering power of 210W. The TiO2 thin film with anatase structure exhibited the best photocatalytic activity.
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