Abstract
In order to determine the influence of process parameters including nitrogen and oxygen flow rate on the structure and electrical transport characteristics of zirconium oxynitride(ZrOxNy) thin films, the ZrOxNy films were prepared on sapphire substrates by RF reactive magnetron sputtering deposition technology. The crystal orientation and morphology of ZrOxNy films prepared at different nitrogen and oxygen flow rate were characterized by XRD and SEM, respectively. The electric transport behavior of ZrOxNy films at 300K to 3K was measured by PPMS. The results show that the insulativity of ZrN films is enhanced with the increase of nitrogen flow rate in sputtering atmosphere. With the increase of oxygen flow rate in sputtering atmosphere, the insulativity of ZrOxNy film is enhanced.
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