Abstract
To ensure the optimal combination of the properties of the thin-film layers of piezoelectric structures and achieve the required characteristics of resonators and devices for selecting and generating of the signals based on them, the influence of technological modes of aluminum nitride films formation on the surface morphology, structure and elemental composition of films used in the construction of microelectronic bulk acoustic waves (BAW) resonator with Bragg reflector, the optimal modes are determined that satisfy the requirements for film layers for a piezoelectric transducer and Bragg reflector.
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