The dispersion properties of surface acoustic wave devices on AlN/LiNbO 3 film/substrate structure

Abstract

Highly c-axis oriented aluminum nitride (AlN) films were deposited on z-cut LiNbO 3 substrates by reactive rf magnetron sputtering. The crystalline properties investigated by X-ray diffraction (XRD) revealed that AlN film with (0 0 2) preferred orientation was improved by an increase of the deposition time within the experimental range. However, the surface morphology of AlN film measured by scanning probe microscopy (SPM) showed that the roughness was getting worse with increase of deposition time. Surface acoustic wave (SAW) properties, measured by a network analyzer in the structure consisting of highly c-axis AlN films on z-cut LiNbO 3 substrates, were investigated. The phase velocity (V P) was significantly increased by the increase of h/ λ, where h is the thickness of AlN film and λ is the wavelength. However, the insertion loss (IL) of SAW filters was also increased by the increase of h/ λ. Experimental results on the temperature characteristics of SAW devices are also presented.