Abstract
The effect of low-energy proton irradiation on the pulse characteristics of silicon n+-p-p+ structures is analyzed. It is shown that irradiation with protons with an energy of 180 keV and a dose of 1015 cm−2 creates a region with an effective lifetime of 5.5·10−8 s in the space charge region of the n+-p junction. Such elements can be used to create high-speed photodiodes with an operating modulation frequency of 18 MHz.
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