Effect of low-energy proton irradiation on parameters of silicon structures with n-p junction

Abstract

The dependences of the separation probability of the Frenkel pair on the temperature and the position of the Fermi level in the band gap cause the dependences of primary radiation defects concentration on the irradiation temperature and impurity concentration. This conclusion is confirmed by study results of electrophysical and optical properties of silicon n+-p-p+ structures, irradiated by the proton flux with the energy of 40 keV and the fluence of 1015 cm−2.