Abstract
The results of investigation into the effect of hydrogen plasma treatment and annealing on the electrical activity of grain boundaries (GBs) in silicon ribbons manufactured with the edge-defined film-fed growth (EFG) technique are presented. It is shown that hydrogenation with small doses of introduced hydrogen leads to decrease of the GB electrical activity, whereas further growth of hydrogenation time gives rise either to saturation or increase of electrical activity for annealed and non-annealed ribbons, respectively. The latter is explained in terms of a model taking into account the concurrence of GB defects passivation and neutralization of boron ions in the vicinity of GB during hydrogenation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
