Abstract
High-resolution x-ray diffraction and photoluminescence experiments were carried out on short-period direct-gap GaAs/AlAs superlattices. Despite a small difference in the well and barrier thicknesses of the samples studied, both the deformation of superlattice (SL) layers caused by the lattice mismatch and thermal activation energy of non-radiative recombination were found to differ for the different samples. The correlation observed between the deformation reduction and the activation energy increase as the SL period decreases is discussed in the context of a configuration coordinate diagram.
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