Abstract
We studied the relationship between lattice-matching and crystalline quality of GaInNAs films grown on GaAs(001) substrates. The lattice mismatch between GaInNAs and GaAs was varied from –0.35% to 0.29%, and the coherent growth of GaInNAs for all of sample in this study was confirmed by (224) X-ray reciprocal space mapping. The full-width at half-maximum (FWHM) of (004) rocking curves showed minimum at the lattice-matched condition, and the FWHM did not depend on N composition. In Raman scattering measurements with the spectrum range of nitrogen-related local-vibrational mode (Ga-N like LO2 mode), a broad peak at 470 cm–1 was observed for all of GaInNAs samples. In addition to the peak at 470 cm–1, a clear shoulder peak at 490 cm–1 which has been understood as stress-relaxation mode was observed only at the lattice-matched sample. It was found that the lattice-matching has a significant effects not only on the crystal axis orientation but also local stress relaxation. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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