Abstract
In this paper, the transmission and reflection spectra of n-Si(100) single crystals are measured; n-GaAs(100); solid solutions of Ge1-хSiх (х = 0.85) in the range (0.2 - 1.7)·10-6 m before and after laser irradiation at the wavelength λ = 532 nm. It is established that the main mechanism of influence of pulsed laser irradiation on the optical properties of thin surface layers of the investigated crystals is structural gettering, that is, the absorption due to the presence of sections of semiconductors that have a defective structure and have the ability to actively absorb defects and points.
Highlights
Due to the intensive development of semiconductor material science, including nanophysics and nanoelectronics, study of electronic phenomena, that manifest themselves in the optical spectra of the surface layers and the volume of functional electronic materials is relevant
It is established that the main mechanism of influence of pulsed laser irradiation on the optical properties of thin surface layers of the investigated crystals is structural gettering, that is, the absorption due to the presence of sections of semiconductors that have a defective structure and have the ability to actively absorb defects and points
The transmission and reflection spectra of n-Si(100) single crystals with specific resistivity ρ = 5 Ω∙cm are measured to elucidate the mechanisms of the influence of pulsed laser irradiation on thin surface layers of semiconductors; n-GaAs with a resistivity ρ = 10 Ω∙cm; solid solutions Ge1-хSiх(х = 0.85) in the range (0.2 - 1.7)·10-6 m before and after laser irradiation in the energy range 66 - 108 mJ/cm2 for n-Si(100) and nGaAs, in the energy range 46.6 - 163.5 mJ/cm2 for solid solutions Ge1-хSiх (х = 0.85)
Summary
The transmission and reflection spectra of n-Si(100) single crystals are measured; n-GaAs(100); solid solutions of Ge1-хSiх (х = 0.85) in the range (0.2 - 1.7)·10-6 m before and after laser irradiation at the wavelength λ = 532 nm. The transmission and reflection spectra of n-Si(100) single crystals with specific resistivity ρ = 5 Ω∙cm are measured to elucidate the mechanisms of the influence of pulsed laser irradiation on thin surface layers of semiconductors; n-GaAs with a resistivity ρ = 10 Ω∙cm; solid solutions Ge1-хSiх(х = 0.85) in the range (0.2 - 1.7)·10-6 m before and after laser irradiation in the energy range 66 - 108 mJ/cm for n-Si(100) and nGaAs, in the energy range 46.6 - 163.5 mJ/cm for solid solutions Ge1-хSiх (х = 0.85). The thermal mechanism of laser treatment is in most cases the main mechanism of action of laser
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