Abstract
In this paper, the transmission and reflection spectra of single crystals р-CdTe(111) are measured; solid solutions of Cd1-хZnхTe (х=0.1) in the range (0.2 – 1.7)·10-6 m before and after laser irradiation at the wavelength λ = 532 nm in the energy range 66 - 164 mJ/cm2 for CdTe(111) and in the energy range 46.6 mJ/cm2 - 163.5 mJ/cm2 for Cd1-хZnxTe (x = 0.1). It is established that the main mechanism of influence of pulsed laser irradiation on the optical properties of thin surface layers of the investigated crystals is structural gettering, that is, the absorption due to the presence of sections of semiconductors that have a defective structure and have the ability to actively absorb defects and points.
Highlights
Semiconductor materials AIIBVI, including CdTe andCd1-xZnxTe, is one of the most promising materials that are used for different kinds of detectors of ionizing radiation [1,2,3,4]
The transmission and reflection spectra of single crystals p-CdTe (111) with specific resistivity ρ = (2÷5)∙109 Ω∙cm are measured to elucidate the mechanisms of the influence of pulsed laser irradiation on thin surface layers of semiconductors; solid solutions
T = f (λ) solid solutions Cd1-хZnхTe (х = 0.1) with a specific resistance of (0.5 ÷ 3)∙1010 Ω·cm
Summary
The transmission and reflection spectra of р-CdTe (111) single crystals; solid solutions of. As can be seen from the figure, the transmittance of single crystals of p-CdTe (111) decreases only when irradiated with an energy density of 108 mJ/cm. In laser processing of these samples energy densities of mJ/cm and 164 mJ/cm transmittance is almost identical to that of the original samples. This experimental fact shows that in this laser treatment of single crystals of p-CdTe (111) in the optical spectra the main role is played by thin surface layers of the investigated material, i.e. changes occurring near the surface of the semiconductor material
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