Abstract
The effects of scanning with a Nd:YAG laser on thermally diffused p-n junction silicon diodes were investigated. The objective was to establish the influence of laser irradiation on diodes fabricated in nondefective silicon material. A comparison of the diode leakage current and breakdown voltages was made between laser scanned and unscanned diodes. Changes in diode leakage current and breakdown voltages were observed, which are apparently due to damage caused by the laser. The influence of thermal annealing after laser scanning was also investigated. After initial scanning the breakdown voltage was decreased and the leakage current increased significantly. After a one hour 450° C thermal anneal, the leakage current of these diodes was seen to decrease. In diodes with original leakage currents greater than 500nA, the current was observed to decrease an order of magnitude from their original value. These results are given with a possible explanation of the causes for this change.
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