Abstract
The influence of two k·p formalisms, namely, the realistic 8-band and 10-band models, on the conduction and valence band structures of a 7 nm InxGa1-xAs1-yNy/GaAs quantum well (QW) has been investigated. It is discovered that at high indium composition (35%), the energy dispersion curves calculated by the 8-band model, using electron effective mass (me*) predicted by band-anticrossing (BAC) model, agrees very well with the results of 10-band model near the Brillouin zone center. However, at lower indium composition (15%), larger deviation of excited state energy level, such as e2, is found. In contrast to the previous reports that assume great enhancement of me* even at indium of 30–40%, me* extrapolated from the BAC model predicted a more modest enhancement that is weakened as the indium composition in the well layer is being increased.
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