Abstract
The influence of hydrostatic pressure on the current–voltage characteristics of surface-barrier diode structures of the Sb–p-Si〈Mn〉–Au type are investigated. The potential-barrier height and the baric coefficient of its variation are found to be eϕδ = 0.75 eV and δ =–1.54 × 10–11 eV/Pa, respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have