Abstract
In this study we used butan and butan/propane gases like the hydrocarbon source. At the same work pressure different irradiation dose receiving time at the same total ion dose were obtained for butan and butan/propan gases. The current voltage characteristics of GaAs Schottky contact, fabricated on substrate irradiated by low energy hydrocarbon ion at glancing ion incidence angle, depends on duration of irradiation dose receiving. For longer duration of dose receiving, damaged surface layer is thicker. It can be explained in terms of defect diffusion influence. Those, for obtaining low effective barrier height and low nonideality factor diodes, we should use shorter dose receiving time. Effective barrier height of Al-GaAs Schottky contact, fabricated on irradiated by low energy hydrocarbon ion substrate is lower than that of Ti-GaAs. It can be explained in terms of reactions and interdiffusion between metal and GaAs.
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