Abstract
It is shown that unlike bulk silicon, for which amorphization is observed at an irradiation dose of 5 × 1016 ion/cm2, thin silicon films on sapphire are amorphized at lower critical doses (1015 ion/cm2). An undamaged surface layer remains when the silicon films are irradiated with Si+ ion beams. Its thickness depends on the current density of the incident beam. Rutherford backscattering studies show that annealing at 950°C improves the crystallinity of the irradiated silicon film. Annealing of the films at 1100°C leads to mixing of the silicon-sapphire interface.
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