Abstract
The influence of heavy ion bombardment of thin sputtered films of TiC was studied. Using a post-deposition bombardment with krypton and xenon ions from a 600 kV ion accelerator on films of the order of 1000 Å thick, it was possible to obtain an improvement of up to 50% in the relative microhardness. Rutherford backscattering and nuclear reaction analysis as well as transmission electron microscopy were used to study the effect of the ion bombardment.
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