Abstract
The dependence of internal residual stresses in thin diamond-like carbon films grown by the PECVD technique on the most important growth parameters such as the power of the exciting RF discharge and the substrate bias potential is considered. The results have shown that the mechanical stresses in films reach the uppermost value of 1.9 GPa at the smallest values of power and potential. The stress decreases with the growth of both parameters and has only a slight dependence on the film thickness in the range 0.1–1 μm. The bombardment of the obtained films by argon ions with energy of 300 keV and phosphorus ions with energy of 200 keV has resulted in the reduction of compressive stress with the ion dose growth down to its inversion. AFM study of the bombarded films has revealed significant changes in their surface morphology.
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