Abstract
The influence of interface structure on the photoelectric properties of InGaN light-emitting diodes grown on (0001) polar, (11–22) semi-polar, and (11–20) nonpolar planes is studied. Nonpolar and semi-polar interface structures are characterized by reduced polarization-related electric fields and suppressed QCSE. The energy bands of the structures grown on these orientations are undistorted, and QWs have more rectangular shapes. Consequently, these structures do not undergo separation of the electron and hole wavefunctions typical of c-plane structures. The simulation results suggest that potoelectric properties and efficiency drop is markedly improved when the polar interface structure is replaced by nonpolar or semi-polar interface structures.
Published Version
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