Abstract
Separate determination of the electronic density of states in bulk a-Si:H and at the oxide/a-Si:H interface of a MOS structure have been made by combining the field effect technique with the capacitance-voltage method. It is found that electronic states existing at the oxide/a-Si:H interface cause no serious errors in the determination of the bulk gap-state density. The discrepancy in the measured gap-state density between the present method and the DLTS or ICTS techniques does not arise from the presence of surface states, but from differences in the electronic properties of a-Si:H.
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