Abstract
Yttrium stabilized zirconium (YSZ – (Y 2O 3) 0,08(ZrO 2) 0,92) thin films were formed by e-beam evaporation technique. The powders of different surface areas were used to prepare thin ceramic films. The influence of the initial powder material on formed thin films electrical and microstructure properties was studied. YSZ thin films were deposited on two types of substrates: optical quartz (SiO 2) and Alloy 600 (Fe–Ni–Cr) substrates. Deposition rate was changed from 2 to 16 Å/s to test its influence on thin film formation and properties. Electrical parameters of YSZ thin ceramics were investigated in the frequency range from 0.1 to 1.0 MHz in temperature range from 473 to 873 K. The conductivity of the electrolyte YSZ-8 thin films was determined by impedance spectroscopy. The formed YSZ films repeat the crystallographic orientation of the initial powder material and do not depend on the powder grain size. It was determined that the deposition rate has influence on the crystallite size. Initial powder grain size and deposition rate influence the relative density of formed YSZ thin films. The ionic conductivity of formed films depends on the grain size of initial powder, also.
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