Abstract
In this work, zinc oxide and indium-doped zinc oxide thin films at different concentrations were deposited by solution techniques at 200 °C. The thin films were characterized by XRD, Raman, FTIR and the four-point probe technique. Through FTIR spectroscopy, interesting behavior was observed when the IZO film at 6 wt.% doping showed a lower number of organic residues. Due to an inductive effect, an unusual displacement of bonds was observed. The reduction of organic residuals corroborated with the behavior of flexible metal–insulator–semiconductor (MIS) capacitors.
Highlights
Metal oxide semiconductors are materials that can be handled to implement in polymeric substrates to flexible electronic applications [1]
For the formation of metal oxide semiconductors four phases occur in solution processes: 1) the synthesis or generation of precursor solution, 2) deposition, 3) pyrolysis or condensation and 4) crystallization [2]
The use of low temperatures (
Summary
Metal oxide semiconductors are materials that can be handled to implement in polymeric substrates to flexible electronic applications [1].
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