Influence of hydrogen dispersive diffusion in nitrided gate oxide on negative bias temperature instability

Abstract

Influence of hydrogen dispersive diffusion in nitrided gate oxide on negative bias temperature instability (NBTI) is examined by using the analytical reaction-dispersive-diffusion (RDD) model, which was developed within a framework of the classical reaction-diffusion model by incorporating the dispersive transport nature of the diffusion. The NBTI experiments verify that by taking the dispersive transport into account, the RDD model well describes the NBTI degradation including its dependence on the stress time, stress temperature and interfacial nitrogen concentration and its power-law behaviors as well. This in turn gives an insight into the roles of the hydrogen dispersive diffusion in the NBTI process.