Influence of highly doped layers on hydrogen in-diffusion into crystalline silicon

Abstract

In this work, the influence of highly doped layers on the hydrogen in-diffusion into silicon from hydrogen-rich silicon nitride is investigated. Hydrogen in the crystalline silicon bulk of wafers with and without highly doped layers present was examined in solar cell-like structures by resistivity measurements for quantification of BH-pair dynamics. Hydrogen diffusion through phosphorus- and boron-doped Float-Zone samples without highly doped layers and with p + - respectively n + -layers was determined via secondary ion mass spectrometry. Therefore, deuterium concentration in an amorphous silicon layer on the backside was measured. This experiment shows an up to threefold increase of deuterium concentration in the amorphous layer for samples with highly doped layers present. A possible explanation of this observation is given by simulations. • Influence of highly doped layers on H in-diffusion. • BH-pair dynamics in samples with and without highly doped layers. • SIMS data of D diffusing through highly doped layers and bulk c-Si. • Simulations of H-species in samples with n + -p-n + structure after firing.