Abstract
Here, the electrical performance of an amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin Film Transistor (TFT) is examined using the Silvaco Atlas tool. The effects of several factors such as drain current (Id), Sub threshold Swing (SS), IonIoff, threshold voltage (Vth), on voltage (Von) are closely examined. When SiO2 was replaced by high-k HfO2, TFT shows low SS of 0.17 V/decade, high IonIoff ratio of ∼1018 and Von of 0.13 V. Effect of channel length is also analysed for high-k Al2O3 dielectric. This analysis might be useful for researchers to realize future TFT related applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
