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Abstract
MOCVD growth of InGaN on ZnO substrates has achieved indium concentration as high as 43% as observed by high-resolution X-ray diffraction (HRXRD). The uniqueness of this finding is the absence of phase separation and the higher indium incorporation compared to growth on thick GaN/sapphire. Transmission electron microscopy (TEM) shows perfectly matched GaN and ZnO lattices. In addition, atomic layer deposition (ALD) transition layers have been grown in order to provide a transition layer on ZnO substrates to block Zn diffusion and allow for future substrate removal for thin nitride fabrication.
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