Abstract
ZnO has been considered as a substrate for epitaxial growth of III-Nitrides due to its close lattice and stacking order match. This paper will cover growth of In x Ga 1-x N epitaxial layer on lattice-matched ZnO substrates by metal-organic chemical vapor deposition (MOCVD). InGaN of various indium compositions from different growth temperatures were well controlled in the InGaN films on ZnO substrates. High-resolution X-ray diffraction (HRXRD) confirmed the epitaxial growth of InGaN film on ZnO. The optical and structural characterization of InGaN epilayer on ZnO substrates was measured by room temperature photoluminescence, temperature-dependent photoluminescence, and field-emission secondary electron microscope. In addition, a transition layer of Al 2 O 3 on ZnO substrates have been employed for InGaN growth to help prevent Zn and O diffusion into the epilayers as well as assist nitride epilayer growth. HRXRD results show a single crystal InGaN film has been successfully grown on annealed Al 2 O 3 coated ZnO substrates.
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