Abstract
For unstable In–Ga–Zn–O (IGZO) thin films, electron-beam irradiation during transmission electron microscopy or heat treatment is reported to change the film structure and enhance its crystallization. Using IGZO films formed under two conditions, we study how the physical properties of IGZO films correlate with the electron-beam irradiation dose or heat-treatment temperature. IGZO films deposited under high deposition pressure contain many voids, have a relatively high impurity concentration, and are crystallized by electron-beam irradiation or heat treatment. In contrast, IGZO films formed under low deposition pressure are dense and the crystal size in the film does not change under electron-beam irradiation or heat treatment. In addition, heat treatment further increases the density of an originally dense film and reduces the defect density.
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