Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition

Abstract

In this article, we report the influence of growth temperature on the luminescent and structural properties of InAsyP1−y/InP strained multiple quantum wells (SMQWs) and strained single quantum wells (SSQWs) grown by metalorganic chemical vapor deposition (MOCVD). The strained quantum wells are characterized by high-resolution transmission electron microscope (TEM), photoluminescence (PL), and double-crystal x-ray diffraction (DC-XRD). An AsH3/(AsH3+PH3) gas flow ratio of 0.50% and 1.48% at 580 and 650 °C growth temperatures, respectively, will result in an InAsP layer with y=0.3 solid composition. The experimental PL emission energies at 10 K at different well thicknesses for the InAsyP1−y/InP SSQWs grown at 580 and 650 °C are in well agreement with the trend of the calculated curves. The TEM lattice image of an InAsP/InP SSQW grown at 580 °C on the order of two monolayers has been demonstrated. The InAsP/InP SSQW structure grown at 580 °C appears to be extremely abrupt, uniform, free of misfit dislocations, and narrow PL linewidth. Besides, the growth of InAsP/InP SMQWs at 580 °C maintains its structural integrity throughout the deposition sequence with smooth interface and well-defined periodicity. However, the InAsP/InP SSQWs or SMQWs exhibit an adverse property at 650 °C growth temperature. From the above results, the lower growth temperature is necessary for the InAsP/InP SMQW growth by MOCVD.