Abstract
The growth mechanism of In-doped ZnO (ZnO:In) nanorods grown on AuGe/Si(111) substrates has been investigated. Unlike to general vapor-liquid-solid mechanism, the adatom kinetics on the surface determines the length-diameter relationship [L(D)], initial nuclei size (D∗), and spatial distribution of impurity atoms. The incorporated In-concentration was estimated to be within solid solubility limit of ZnO in terms of x-ray diffraction analysis, but the evolution of photoluminescence peak position and intensity revealed an evidence of extrinsic carrier increment. Hall-effect measurement was used to evaluate the carrier concentration of ZnO:In nanorods.
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