Abstract
AbstractFor vertical‐cavity surface‐emitting laser pillar microcavities with three‐dimensional optical mode confinement, we theoretically study the influence of growth imperfections on the cavity quality factor. Mode calculations based on a vectorial transfer‐matrix approach are used to simulate layer thickness fluctuations as well as a gradual variation of the layer thickness across the micropillar for an AlGaN/GaN material system. Experimental estimates for the layer thickness profile are obtained with transmission electron microscopy Z‐contrast images.
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