Abstract
The influence of growth conditions on the photoluminescence of SiGe quantum wells is presented. Growth temperatures above 600°C are found to be a prerequisite for a good layer quality. The variation of growth rates between 0.25 and 1 åA/s, however, has no significant effect on the spectra. With optimized growth conditions, strong excitonic dominated quantum well luminescence with line widths below 5 meV has been achieved.
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