Abstract
We present photoluminescence studies of SiGe quantum wells with different well widths. Special attention is paid to the influence of growth conditions on the spectra. Growth temperatures above 600 °C are found to be a prerequisite for a good layer quality. With optimized growth conditions, strong excitonic dominated luminescence with full width at half-maximum values as low as 4.5 meV has been achieved for narrow quantum wells. The variation in the luminescence energy with germanium content and well width is well described by theory.
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