Abstract
Graphite /n-Si Schottky diodes were fabricated by electron beam evaporation of graphite thin films on n-type silicon substrates. The influence of the thickness of graphite films on the photoelectric and electrical properties of these diodes has been studied. It is determined that our Schottky diodes can be used as photodiodes and solar cells. The temperature dependences of shunt and series resistances of diodes were also investigated. In the case of forward and reverse bias, the dominant mechanisms of current transfer through the studied diodes were determined. The responsivity and detectivity of graphite/n-Si Schottky diodes were also calculated. The studied heterojunctions have pronounced diode characteristics with a rectification coefficient for a structure with a thinner film RR ≈ 5·102, and for a structure with a thicker film RR ≈ 102.
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