Abstract
This paper reports the results of an investigation of electrical properties photosensitive Schottky diodes graphite/n-Si prepared for the first time by the transfer of dry drawn graphite films onto single crystal n-Si. Barrier parameters were determined and C-V characteristics was studied. The dominating mechanisms of current transfer through the heterojunction have been determined: at forward bias is well described within of tunneling-recombination models via surface states at the graphite/n-Si interface, at reverse bias was determined to be the small current flows through the shunt resistance. It was found that under illumination with white light with an intensity Popt = 80 mW/cm2, the reverse current Ilight increases by more than an order of magnitude in comparison with its value in the dark Idark due to the separation of photogenerated electron-hole pairs. From the above, it can be conclude that the fabricated Schottky diodes can be use as a photosensitive device.
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