Influence of gate oxide short defects on the stability of minimal sized SRAM core-cell by applying non-split models

J.M Galliere,M Renovell,L Dilillo,F Azais

doi:10.1109/dtis.2009.4938060

Influence of gate oxide short defects on the stability of minimal sized SRAM core-cell by applying non-split models

J.M Galliere, M Renovell + Show 2 more

https://doi.org/10.1109/dtis.2009.4938060

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Publication Date: Apr 1, 2009

Citations: 2

Affiliation: University of Montpellier, Montpellier Laboratory of Informatics, Robotics and Microelectronics, French National Centre for Scientific Research

#Gate Oxide Short #Gate Oxide Short Defects + Show 8 more

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Abstract

In this paper, we study the impact of Gate Oxide Short (GOS) defects in SRAM core-cells in terms of stability in static condition. Existing studies have applied split GOS models that require the use of non-realistic oversized designs. The novelty of this research is the application of a non-split GOS model, which allows the study of the electric deviation of the behavior of realistic minimal sized SRAM core-cells. The results of extensive simulations are produced, by taking in account defect variations in terms of position in the transistor gate oxide and resistance.

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