Abstract
The effect of gas transport on the lateral oxidation kinetics of aluminum arsenide has been studied by limiting the gas transport to the gas–oxide interface using closely spaced mesas. At 440 °C the gas transport factor is found to be 8.5±1.3 times the reaction rate coefficient, resulting in a measurable decrease in oxidation rate for mesas closer than 200 nm. This confirms the usual assumption that the initial oxidation rate is limited by the reaction kinetics at the oxidizing interface and not the gas transport for normal oxidation conditions
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