Abstract
Ga-doped ZnO (GZO) thin-film transistors (TFTs) with different doping concentrations ( ${n}_{Ga}$ : ${n}_{Zn} =0$ , 1:150, 1:75, 1:50) were successfully fabricated by atomic layer deposition. Among them, GZO TFTs with the doping concentration of 1:75 exhibited a high field-effect mobility of 16.2 cm2 V−1 s−1, a small subthreshold swing of 0.22 V dec−1, a high ON-/ OFF-current ratio of 107, and a proper threshold voltage of 6.0 V as well as a small threshold voltage shift of 0.14 V under positive bias stress. Compared to ZnO (ZO) TFTs, GZO TFTs exhibit excellent bias stability and electrical properties, which can be attributed to appropriate Ga doping concentration suppressing the oxygen vacancy defects, decreasing the trap density at the Al2O3/ZO interfaces, and broadening energy band of the ZO thin films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
