Influence of field-assisted annealing on Cu(V) barrier-less metallization

Abstract

Influence of annealing process on the diffusion barrier property and thermal stability for Cu(V) barrier-less metallization has been investigated. The Cu(V) films were deposited on SiO2/Si substrates by magnetron sputtering, then Some Cu(V)/SiO2/Si samples were field-assisted annealed (−20 V) without breaking the vacuum, Another samples were vacuum-annealed without FAA. After annealing, compared with the samples without FAA, the samples with FAA has lower resistivity and higher Cu(111) signal. According to XPS results, the segregation of V at the interface in the samples with FAA is a little more than that without FAA, the thickness of the self-formed layer for samples with FAA is a little thicker than that of the samples without FAA detected by TEM. The results suggest that the FAA process can improve the thermal stability and the diffusion barrier property for the Cu(V)/SiO2/Si interconnection system.