Abstract
The effect of γ-irradiation, concentration of Eu2+ ions, cationic substitution of components (Ga→Al) on photoluminescence (PL) of Ca(AlxGa1-x)2S4:Eu2+ solid solutions was studied. It is shown that the PL intensity of the samples increases in two times with increasing the gamma irradiation dose (D) in the range of 0–1000 krad, as well as the PL intensity increase three times with increasing the concentration of Eu2+ ions from 3% to 7%. There are observed 44 nm blueshift in PL maxima when partial substitutions of Ga ions with Al ions, which enables efficient luminescence emission in the green-yellow region of the optical spectrum. It has been determined that observed PL emission is due to the electronic transitions of Eu2+ ions from excited 4f65d levels to the ground 4f7 level.
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