Abstract
The influence of the circuit’s electric modes on the radiation sensitivity of hydrogen sensors based on the metal-insulator-semiconductor field-effect transistor with structure Pd-Ta2O5-SiO2-Si (MISFET) was investigated. There were measured the hydrogen responses of output voltages V of the MISFET-based circuits at different gate voltages before and after the electron irradiations. The voltages V as functions of hydrogen concentration C were determined for different ionizing doses D. Models of influence of the electric modes on the radiation sensitivity of sensors were based on experimental dependencies of V(C, D). The recommendations for the optimal choice of MISFET-based circuit’s electric modes were formulated.
Highlights
The hydrogen sensors based on the metal-insulator-semiconductor field-effect transistor (MISFETs) have been studied by many investigators [1,2,3,4,5,6,7]
This work deals with the integrated hydrogen gas sensors with MISFET sensing element based on Pd-Ta2O5-SiO2-Si structure
total ionizing dose D (TID) effects in the MISFET-based hydrogen sensors depend on electrical modes, which are determined by the type of circuit and its electrical parameters
Summary
The hydrogen sensors based on the metal-insulator-semiconductor field-effect transistor (MISFETs) have been studied by many investigators [1,2,3,4,5,6,7]. This work deals with the integrated hydrogen gas sensors with MISFET sensing element based on Pd-Ta2O5-SiO2-Si structure. The characteristics of these sensors have been already investigated at normal levels of background radiation. There are cases, when the gas analysis devices must be used for a long time at raised radiation levels. In spite of low dose rates in above examples, the long-time irradiation (during 200–500 days) may result in degradation of performance characteristics of semiconductor sensors.
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