Influence of electric-field-assisted thermal ionization on the formation of the schottky barrier between metal and amorphous silicon

Abstract

The expression for a distribution function of charge carriers over deep levels in terms of the Poole-Frenkel effect in the space charge region is obtained. The inclusion of this effect permitted us to calculate the influence of the electric-field-assisted thermal ionization effect on a space charge density, a distribution of potential in the space charge region, and quasistatic capacitance-voltage characteristics of the metal-〈amorphous silicon〉 contact.