Abstract
Nickel-metal-induced lateral crystallization (MILC) was used to fabricate polycrystalline silicon thin films on glass substrates. Patterned Ni lines were formed on amorphous Si films by a lift-off process using photo resist. The samples were annealed in an N2 atmosphere in a furnace at temperatures ranging from 5501C to 6001C. Both the doping concentration of the Si films and the annealing temperature strongly affected the orientation of the crystals. A p-type poly-Si film with a boron concentration of 5 � 10 19 cm � 3 annealed at 5501C was found to be strongly oriented in the / 22 0S direction. r 2002 Elsevier Science B.V. All rights reserved.
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