Abstract
In this work, the effect of abrupt source doping in a tunnel field effect transistor (TFET) using SiGe as the source and drain material is investigated for future low-voltage and high-power applications. The effect of critical device factors, such as dielectric material and gate oxide thickness and dependency on the mole fraction, are examined. The results of the proposed SiGe-Si-SiGe TFET structure are compared with existing data of Si TFET and SiGe-Si-Si TFET with and without abrupt doping. The proposed structure shows better ION/IOFF ratio of the order of 1011 and a sub-threshold swing of 18.18 mV/decade, which ensures fast switching applications of the device.
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