Abstract
A co-dopand approach was used to investigate influence of gallium-nitrogen co-doping on the microstructure and electrical parameters of ZnO. ZnO:Ga:N thin films were deposited by rf diode sputtering at varying nitrogen content (0÷100%) in Ar/N2 gas. ZnO:Ga films (0% N2) showed minimum resistivity of 0.12 Ωcm, electron concentration of 2.5x1019 cm-3 and mobility of 2 cm2/Vs. A hole concentration of 2.6x1018 cm-3, a mobility of 2 cm2/Vs and a resistivity of 1.5 Ωcm in ZnO:Ga:N resulted from the deposition with 100% N2 in Ar/N2 gas. XRD patterns revealed a profound impact of Ga-N co-doping on film orientation. The estimated crystallite size varied from 234 to 41 nm, depending on the N2 content. TEM images of the co-doped films along with the corresponding selected area diffraction pattern indicated a polycrystalline, columnar layer with a c-axis preferred orientation. AFM images demonstrated the different crystalline structure and grain formation depending on nitrogen content.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
