Effects of Mg doping on the properties of highly transparent conductive and near infrared reflective Zn 1−xMg xO:Ga films

Abstract

Highly transparent conductive and near infrared (IR) reflective Gallium-doped ZnMgO (Zn 1− x Mg x O:Ga) films with Mg content from 0 to 10 at% were deposited on glass substrate by DC reactive magnetron sputtering. X-ray diffraction shows all the ZnMgO:Ga films are polycrystalline and have wurtzite structure with a preferential c-axis orientation. Hall measurements indicate that the resistivity of these films obviously increases with the Mg concentration increasing. The average transmittance of Zn 1− x Mg x O:Ga films is over 90% in the visible range. All the Zn 1− x Mg x O:Ga films have low transmittance and high reflectance in the IR region.