Abstract
The structure of InGaAs/GaAs quantum wires (QWRs) grown on V-grooved GaAs substrates by low pressure metalorganic vapor phase epitaxy was studied by conventional and high resolution transmission electron microscopy. We show that, by growing the structure on grooves with (3 1 1)A-like and (1 1 1)A-like oriented facets, the quantum wire profile can be changed from a constant thickness bent layer to a strongly tapered quantum wire of crescent shape. Highly uniform arrays of vertically stacked wires with a narrow size distribution along the growth direction have been obtained for both structures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
