Abstract

Based on the actual hot zone structure of an AlN crystal growth resistance furnace, the global numerical simulation on the heat transfer process in the AlN crystal growth was performed. The influence of different heater structures on the growth of AlN crystals was investigated. It was found that the top heater can effectively reduce the axial temperature gradient, and the side heater 2 has a similar effect on the axial gradient, but the effect feedback is slightly weaker. The axial temperature gradient tends to increase when the bottom heater is added to the furnace, and the adjustable range of the axial temperature gradient of the side 1 heater + bottom heater mode is the largest. Our work will provide important reference values for AlN crystal growth by the resistance method.

Highlights

  • In recent years, ultra-wide bandgap semiconductor materials represented by aluminum nitride (AlN) have been widely used in different fields due to their excellent high-frequency power characteristics, stable high-temperature performance, low energy loss, and good UV transmittance [1,2,3]

  • Researchers have performed a lot of simulation work on the thermal field and thermal stress for physical vapor transport (PVT) AlN crystal growth, there are no reports on the influence of different heater structures on the growth of AlN crystals by the resistance method

  • The influences of different heaters on the thermal field in the tungsten crucible and the growth of AlN crystals are investigated by numerical simulation

Read more

Summary

Introduction

Ultra-wide bandgap semiconductor materials represented by aluminum nitride (AlN) have been widely used in different fields due to their excellent high-frequency power characteristics, stable high-temperature performance, low energy loss, and good UV transmittance [1,2,3]. Researchers have performed a lot of simulation work on the thermal field and thermal stress for PVT AlN crystal growth, there are no reports on the influence of different heater structures on the growth of AlN crystals by the resistance method. The COMSOL Multiphysics software is used to simulate the thermal field of the self-designed resistance method AlN crystal growth furnace under different heater structures. All calculations in this paper ignore the influence of gas flow in the growth cavity. (3) It is considered that the heater itself has no heat consumption, and all the heat is consumed in the heating system. (4) It is assumed that the outermost temperature of the system is constant (300 K)

Thermal Field Geometric Model and Simulation Parameters
Summary
Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.