Influence of deposition temperature and bias voltage on the crystalline phase of Er2O3 thin films deposited by filtered cathodic arc

Abstract

Er2O3 thin films on Eurofer steel substrates were produced by a filtered cathodic arc device, varying the substrate temperature (RT – 700°C) and sample bias (0 to −450V). The crystallographic phase was analyzed by X-ray diffraction and Raman spectroscopy. Deposition at ⩾600°C without bias lead to solely formation of the cubic Er2O3 phase. Thin films of the uncommon, monoclinic B-phase were prepared with a negative bias voltage of ⩾100V at RT, and at temperatures ⩽500°C for −250V bias. The B-phase films exhibit a strongly textured film structure. Residual stress measurements show high compressive stress for B-phase films deposited at RT.